Mechanical stress investigation after technological process in Deep Trench Termination DT2 using BenzoCycloButene as dielectric material

نویسندگان

  • Houssam Arbess
  • F. Baccar
  • L. Théolier
  • Stephane Azzopardi
  • Eric Woirgard
چکیده

Article history: Received 24 May 2015 Received in revised form 22 June 2015 Accepted 2 July 2015 Available online xxxx Mechanical residual stress after technological process has been investigated on 1200 V Deep Trench Termination Diode. The dielectric used to fill the trenches was the BenzoCycloButene (BCB). Four years after the fabrication and storage in a clean roomwithout any electrical or thermo-mechanical stress, cracks in the BCB and delamination at the silicon-BCB interface have been observed. In order to understand such phenomena, the mechanical stress in this diode has been studied with the help of finite element simulator (Sentaurus Process TCAD tool). 2D and 3D structures have been simulated in order to evaluate the stress level and its localization. Several optimizations of the trench topology have been proposed in order to minimize the stress level while maintaining a constant breakdown voltage. © 2015 Elsevier Ltd. All rights reserved.

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عنوان ژورنال:
  • Microelectronics Reliability

دوره 55  شماره 

صفحات  -

تاریخ انتشار 2015